A datasheet from Micron says:

The factory identifies invalid blocks before shipping by programming data other than FFh (x8) or FFFFh (x16) into the first spare location (column address 2,048 for x8 devices, or column address 1,024 for x16 devices) of the first or second page of each bad block.

Which means one should scan the 2nd page too.

Signed-off-by: Guennadi Liakhovetski lg@denx.de ---

I don't know if this actually happens, whether the manufacturer actually ever writes markers to the second page, but that's what the documentation says. In fact, we anyway then throw options away in nand_memory_bbt() at least for RAM-based BBT. So, don't know if this is really useful. Feel free to drop.

diff --git a/drivers/mtd/nand/nand_ids.c b/drivers/mtd/nand/nand_ids.c index 7363490..1a0779a 100644 --- a/drivers/mtd/nand/nand_ids.c +++ b/drivers/mtd/nand/nand_ids.c @@ -77,14 +77,19 @@ struct nand_flash_dev nand_flash_ids[] = { {"NAND 128MiB 3,3V 16-bit", 0xC1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},

/* 2 Gigabit */ - {"NAND 256MiB 1,8V 8-bit", 0xAA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 256MiB 3,3V 8-bit", 0xDA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 256MiB 1,8V 16-bit", 0xBA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, - {"NAND 256MiB 3,3V 16-bit", 0xCA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, + {"NAND 256MiB 1,8V 8-bit", 0xAA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR | + NAND_BBT_SCAN2NDPAGE}, + {"NAND 256MiB 3,3V 8-bit", 0xDA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR | + NAND_BBT_SCAN2NDPAGE}, + {"NAND 256MiB 1,8V 16-bit", 0xBA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR | + NAND_BBT_SCAN2NDPAGE}, + {"NAND 256MiB 3,3V 16-bit", 0xCA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR | + NAND_BBT_SCAN2NDPAGE},

/* 4 Gigabit */ {"NAND 512MiB 1,8V 8-bit", 0xAC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 512MiB 3,3V 8-bit", 0xDC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, + {"NAND 512MiB 3,3V 8-bit", 0xDC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR | + NAND_BBT_SCAN2NDPAGE}, {"NAND 512MiB 1,8V 16-bit", 0xBC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, {"NAND 512MiB 3,3V 16-bit", 0xCC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},