Use in-band bad block table (NAND_BBT_NO_OOB) which allows to use the full OOB for hardare ECC purposes. Since there is no ECC correction on the OOB it is also safer to use in-band area to store the bad block table marker.
Signed-off-by: Stefan Agner stefan@agner.ch --- drivers/mtd/nand/vf610_nfc.c | 29 ++--------------------------- 1 file changed, 2 insertions(+), 27 deletions(-)
diff --git a/drivers/mtd/nand/vf610_nfc.c b/drivers/mtd/nand/vf610_nfc.c index 5d72b4a..05cbdf3 100644 --- a/drivers/mtd/nand/vf610_nfc.c +++ b/drivers/mtd/nand/vf610_nfc.c @@ -155,29 +155,6 @@ struct vf610_nfc { #define mtd_to_nfc(_mtd) \ (struct vf610_nfc *)((struct nand_chip *)_mtd->priv)->priv
-static u8 bbt_pattern[] = {'B', 'b', 't', '0' }; -static u8 mirror_pattern[] = {'1', 't', 'b', 'B' }; - -static struct nand_bbt_descr bbt_main_descr = { - .options = NAND_BBT_LASTBLOCK | NAND_BBT_CREATE | NAND_BBT_WRITE | - NAND_BBT_2BIT | NAND_BBT_VERSION, - .offs = 11, - .len = 4, - .veroffs = 15, - .maxblocks = 4, - .pattern = bbt_pattern, -}; - -static struct nand_bbt_descr bbt_mirror_descr = { - .options = NAND_BBT_LASTBLOCK | NAND_BBT_CREATE | NAND_BBT_WRITE | - NAND_BBT_2BIT | NAND_BBT_VERSION, - .offs = 11, - .len = 4, - .veroffs = 15, - .maxblocks = 4, - .pattern = mirror_pattern, -}; - static struct nand_ecclayout vf610_nfc_ecc45 = { .eccbytes = 45, .eccpos = {19, 20, 21, 22, 23, @@ -624,10 +601,8 @@ static int vf610_nfc_nand_init(int devnum, void __iomem *addr)
/* Bad block options. */ if (cfg.flash_bbt) - chip->bbt_options = NAND_BBT_USE_FLASH | NAND_BBT_CREATE; - - chip->bbt_td = &bbt_main_descr; - chip->bbt_md = &bbt_mirror_descr; + chip->bbt_options = NAND_BBT_USE_FLASH | NAND_BBT_NO_OOB | + NAND_BBT_CREATE;
/* Set configuration register. */ vf610_nfc_clear(mtd, NFC_FLASH_CONFIG, CONFIG_ADDR_AUTO_INCR_BIT);