Sam Song wrote:
Bank # 1: CFI conformant FLASH (16 x 16) Size: 8 MB in 128 Sectors Erase timeout 16384 ms, write timeout 0 ms, buffer write timeout 4096 ms, buffer size 32
Looks like your flash part does not support single word writes via conventional interface (write timeout is 0). It must use buffered writes. Did you enable buffer writes? You probably did but just double checking...
I didn't enable buffer writes. Once I defined CFG_FLASH_USE_BUFFER_WRITE, all save operations would encounter an error. Actually, I noticed it was unaccptable to enable buffer write for AMD flash.
I guess you can implement CFG_FLASH_USE_BUFFER_WRITE for AMD style flash. The details is in the datasheet. It should speed up the programming anyway.
Here is the datasheet: http://www.spansion.com/datasheets/s29gl-m_00_b6_e.pdf
Since you are able to write small amounts of data successfully, it means that either timeout or status processing is not quite correct. For non-buffered writes I believe the write timeout of 0 may be the problem. Typically these values are set to 0 if the feature is not supported but the datasheet gives program sequence as well. Please override the data read from CFI regarding write timeout with a non zero value (say 1ms timeout) and see what happens. Perhaps, they set the timeout to 0 because they want the process to be completely driven by DQ7 bits. When timeout is 0 we might be bypassing the DQ7 toggle check so verify the path is working as expected. Finally, they have toggle/operations defined for other DQ bits in additon to DQ7. It might be necessary to monitor other bits as well for a successful completion. You might need to verify that as well.
Test your flash writes with debug turned off. Debugging code interferes in my Intel flash boards and cp fails.
Good luck, Tolunay