Re: [PATCH 7/8] sunxi: Parameterize bit delay code in H616 DRAM driver

On Sun, 11 Dec 2022 17:32:12 +0100 Jernej Skrabec jernej.skrabec@gmail.com wrote:

Hi Jernej,

These values are highly board specific and thus make sense to add parameter for them. To ease adding support for new boards, let's make them same as in vendor DRAM settings.

So scrolling up and down: does this patch miss the TPR11 and TPR12 values in the OPi-Zero2 defconfig? And should we not default to 0 in Kconfig to help spotting this omission more easily for new boards? If I pieced the bits together correctly, we end up with the same values in the register with TPR11=0xfffedddb and TPR12=0xeddca998, and ODT_EN being irrelevant.

Signed-off-by: Jernej Skrabec jernej.skrabec@gmail.com

.../include/asm/arch-sunxi/dram_sun50i_h616.h | 4 + arch/arm/mach-sunxi/Kconfig | 18 ++ arch/arm/mach-sunxi/dram_sun50i_h616.c | 189 +++++++++++++----- 3 files changed, 162 insertions(+), 49 deletions(-)

diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h index b5140c79b70e..c7890c83391f 100644 --- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h +++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h @@ -145,6 +145,7 @@ check_member(sunxi_mctl_ctl_reg, unk_0x4240, 0x4240); #define TPR10_READ_CALIBRATION BIT(21) #define TPR10_READ_TRAINING BIT(22) #define TPR10_WRITE_TRAINING BIT(23) +#define TPR10_UNKNOWN_FEAT3 BIT(30)

As mentioned in the other patch: if we don't know the meaning of this bit, I'd prefer using BIT(30) directly, or at least encode BIT30 in the name.

struct dram_para { u32 clk; @@ -156,7 +157,10 @@ struct dram_para { u32 dx_odt; u32 dx_dri; u32 ca_dri;

• u32 odt_en; u32 tpr10;
• u32 tpr11;
• u32 tpr12;

};

diff --git a/arch/arm/mach-sunxi/Kconfig b/arch/arm/mach-sunxi/Kconfig index 778304b77e26..b050f0a56971 100644 --- a/arch/arm/mach-sunxi/Kconfig +++ b/arch/arm/mach-sunxi/Kconfig @@ -67,11 +67,29 @@ config DRAM_SUN50I_H616_CA_DRI help CA DRI value from vendor DRAM settings.

+config DRAM_SUN50I_H616_ODT_EN

• hex "H616 DRAM ODT EN parameter"
• default 0x1
• help

•  ODT EN value from vendor DRAM settings.
  

config DRAM_SUN50I_H616_TPR10 hex "H616 DRAM TPR10 parameter" help TPR10 value from vendor DRAM settings. It tells which features should be configured, like write leveling, read calibration, etc.

+config DRAM_SUN50I_H616_TPR11

• hex "H616 DRAM TPR11 parameter"
• default 0x0
• help

•  TPR11 value from vendor DRAM settings.
  

+config DRAM_SUN50I_H616_TPR12

• hex "H616 DRAM TPR12 parameter"
• default 0x0
• help

•  TPR12 value from vendor DRAM settings.
  

endif

config SUN6I_PRCM diff --git a/arch/arm/mach-sunxi/dram_sun50i_h616.c b/arch/arm/mach-sunxi/dram_sun50i_h616.c index 3b2ba168498c..df06cea42464 100644 --- a/arch/arm/mach-sunxi/dram_sun50i_h616.c +++ b/arch/arm/mach-sunxi/dram_sun50i_h616.c @@ -574,7 +574,7 @@ static bool mctl_phy_write_training(struct dram_para *para)

static void mctl_phy_bit_delay_compensation(struct dram_para *para) {

• u32 *ptr;

• u32 *ptr, val; int i;

  if (para->tpr10 & TPR10_UNKNOWN_FEAT2) {

@@ -582,49 +582,93 @@ static void mctl_phy_bit_delay_compensation(struct dram_para *para) setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8); clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10);

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = para->tpr11 & 0x3f;
  

• else
  

• 	val = (para->tpr11 & 0xf) << 1;
  

• ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x16, ptr);
  

• 	writel_relaxed(0x16, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0);
  

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590);
  

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc);
  

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->odt_en >> 15) & 0x1e;
  

So I guess odt_en stands for "ODT enable". Looking at the D1 DRAM driver, they have a boot0 parameter odt_en which is either 0x0 or 0x1, so it looks like a boolean value. This seems to be also the case here? In the D1 driver, this seems to gate the ZQ value being used, which provides the actual timing values. So is TPR10_UNKNOWN_FEAT3 actually this ODT_EN switch, and the variable containing the timing bits should be zq_value or CONFIG_DRAM_ZQ?

• else
  

• 	val = (para->tpr11 >> 15) & 0x1e;
  

So I am wondering if it's less confusing to mask first, then shift? Granted, this here is shift from [19:16] into [5:1], so it's not easy either way, but I think it's easier to match the mask with the provided TPR11 value.

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4d0);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x590);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4cc);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x58c);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->tpr11 >> 8) & 0x3f;
  

• else
  

• 	val = (para->tpr11 >> 3) & 0x1e;
  
  

  ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x1a, ptr);
  

• 	writel_relaxed(0x1a, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e4);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x520);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e0);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->odt_en >> 19) & 0x1e;
  

Is this really odt_en as a base, while *most* of the other bits use TPR11 as well? Just asking, since it doesn't fit into my naive pattern matching ;-)

The rest looks correct (minus the repeat of the above mentioned issues), I compared the register offsets between - and +.

Cheers, Andre

• else
  

• 	val = (para->tpr11 >> 19) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x524);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5e4);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x520);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5e0);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->tpr11 >> 16) & 0x3f;
  

• else
  

• 	val = (para->tpr11 >> 7) & 0x1e;
  
  

  ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x604); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x1a, ptr);
  

• 	writel_relaxed(0x1a, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x650);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x710);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x64c);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x70c);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->odt_en >> 23) & 0x1e;
  

• else
  

• 	val = (para->tpr11 >> 23) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x650);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x710);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x64c);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x70c);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->tpr11 >> 24) & 0x3f;
  

• else
  

• 	val = (para->tpr11 >> 11) & 0x1e;
  
  

  ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x658); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x1a, ptr);
  

• 	writel_relaxed(0x1a, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a4);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x764);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a0);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x760);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->odt_en >> 27) & 0x1e;
  

• else
  

• 	val = (para->tpr11 >> 27) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6a4);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x764);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6a0);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x760);
  
  

  dmb();

@@ -635,49 +679,93 @@ static void mctl_phy_bit_delay_compensation(struct dram_para *para) clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80); clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 4);

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = para->tpr12 & 0x3f;
  

• else
  

• 	val = (para->tpr12 & 0xf) << 1;
  

• ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x480); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x10, ptr);
  

• 	writel_relaxed(0x10, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x528);
  

• writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x5e8);
  

• writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x4c8);
  

• writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x588);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->odt_en << 1) & 0x1e;
  

• else
  

• 	val = (para->tpr12 >> 15) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x528);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5e8);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4c8);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x588);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->tpr12 >> 8) & 0x3f;
  

• else
  

• 	val = (para->tpr12 >> 3) & 0x1e;
  
  

  ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d4); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x12, ptr);
  

• 	writel_relaxed(0x12, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x52c);
  

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5ec);
  

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x51c);
  

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5dc);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->odt_en >> 3) & 0x1e;
  

• else
  

• 	val = (para->tpr12 >> 19) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x52c);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5ec);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x51c);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5dc);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->tpr12 >> 16) & 0x3f;
  

• else
  

• 	val = (para->tpr12 >> 7) & 0x1e;
  
  

  ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x600); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x12, ptr);
  

• 	writel_relaxed(0x12, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x6a8);
  

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x768);
  

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x648);
  

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x708);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->odt_en >> 7) & 0x1e;
  

• else
  

• 	val = (para->tpr12 >> 23) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6a8);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x768);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x648);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x708);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->tpr12 >> 24) & 0x3f;
  

• else
  

• 	val = (para->tpr12 >> 11) & 0x1e;
  
  

  ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x654); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x14, ptr);
  

• 	writel_relaxed(0x14, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x6ac);
  

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x76c);
  

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x69c);
  

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x75c);
  

• if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
  

• 	val = (para->odt_en >> 11) & 0x1e;
  

• else
  

• 	val = (para->tpr12 >> 27) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6ac);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x76c);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x69c);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x75c);
  
  

  dmb();

@@ -1021,7 +1109,10 @@ unsigned long sunxi_dram_init(void) .dx_odt = CONFIG_DRAM_SUN50I_H616_DX_ODT, .dx_dri = CONFIG_DRAM_SUN50I_H616_DX_DRI, .ca_dri = CONFIG_DRAM_SUN50I_H616_CA_DRI,

• .odt_en = CONFIG_DRAM_SUN50I_H616_ODT_EN,
  

  .tpr10 = CONFIG_DRAM_SUN50I_H616_TPR10,

• .tpr11 = CONFIG_DRAM_SUN50I_H616_TPR11,
  

• .tpr12 = CONFIG_DRAM_SUN50I_H616_TPR12,
  

  }; unsigned long size;