Re: [PATCH v2 07/10] sunxi: Parameterize bit delay code in H616 DRAM driver

On Mon, 10 Apr 2023 10:21:16 +0200 Jernej Skrabec jernej.skrabec@gmail.com wrote:

These values are highly board specific and thus make sense to add parameter for them. To ease adding support for new boards, let's make them same as in vendor DRAM settings.

Signed-off-by: Jernej Skrabec jernej.skrabec@gmail.com

Some bits still look odd, as mentioned in the previous review, but I guess there is really not much we can do about it. Meh. Seems to work, though, and the values seem to match before and after, so:

Reviewed-by: Andre Przywara andre.przywara@arm.com

Cheers, Andre

---

.../include/asm/arch-sunxi/dram_sun50i_h616.h | 3 + arch/arm/mach-sunxi/Kconfig | 18 ++ arch/arm/mach-sunxi/dram_sun50i_h616.c | 189 +++++++++++++----- configs/x96_mate_defconfig | 2 + 4 files changed, 163 insertions(+), 49 deletions(-)

diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h index dbdc6b694ec1..034ba98bc243 100644 --- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h +++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h @@ -155,7 +155,10 @@ struct dram_para { u32 dx_odt; u32 dx_dri; u32 ca_dri;

• u32 odt_en; u32 tpr10;
• u32 tpr11;
• u32 tpr12;

};

diff --git a/arch/arm/mach-sunxi/Kconfig b/arch/arm/mach-sunxi/Kconfig index 4300d388e066..7b38e83c2d7e 100644 --- a/arch/arm/mach-sunxi/Kconfig +++ b/arch/arm/mach-sunxi/Kconfig @@ -67,11 +67,29 @@ config DRAM_SUN50I_H616_CA_DRI help CA DRI value from vendor DRAM settings.

+config DRAM_SUN50I_H616_ODT_EN

• hex "H616 DRAM ODT EN parameter"
• default 0x1
• help

•  ODT EN value from vendor DRAM settings.
  

config DRAM_SUN50I_H616_TPR10 hex "H616 DRAM TPR10 parameter" help TPR10 value from vendor DRAM settings. It tells which features should be configured, like write leveling, read calibration, etc.

+config DRAM_SUN50I_H616_TPR11

• hex "H616 DRAM TPR11 parameter"
• default 0x0
• help

•  TPR11 value from vendor DRAM settings.
  

+config DRAM_SUN50I_H616_TPR12

• hex "H616 DRAM TPR12 parameter"
• default 0x0
• help

•  TPR12 value from vendor DRAM settings.
  

endif

config SUN6I_PRCM diff --git a/arch/arm/mach-sunxi/dram_sun50i_h616.c b/arch/arm/mach-sunxi/dram_sun50i_h616.c index 3fe45845b78e..f5d8718fefff 100644 --- a/arch/arm/mach-sunxi/dram_sun50i_h616.c +++ b/arch/arm/mach-sunxi/dram_sun50i_h616.c @@ -574,7 +574,7 @@ static bool mctl_phy_write_training(struct dram_para *para)

static void mctl_phy_bit_delay_compensation(struct dram_para *para) {

• u32 *ptr;

• u32 *ptr, val; int i;

  if (para->tpr10 & TPR10_DX_BIT_DELAY1) {

@@ -582,49 +582,93 @@ static void mctl_phy_bit_delay_compensation(struct dram_para *para) setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8); clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10);

• if (para->tpr10 & BIT(30))
  

• 	val = para->tpr11 & 0x3f;
  

• else
  

• 	val = (para->tpr11 & 0xf) << 1;
  

• ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x16, ptr);
  

• 	writel_relaxed(0x16, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0);
  

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590);
  

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc);
  

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->odt_en >> 15) & 0x1e;
  

• else
  

• 	val = (para->tpr11 >> 15) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4d0);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x590);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4cc);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x58c);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->tpr11 >> 8) & 0x3f;
  

• else
  

• 	val = (para->tpr11 >> 3) & 0x1e;
  
  

  ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x1a, ptr);
  

• 	writel_relaxed(0x1a, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e4);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x520);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e0);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->odt_en >> 19) & 0x1e;
  

• else
  

• 	val = (para->tpr11 >> 19) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x524);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5e4);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x520);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5e0);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->tpr11 >> 16) & 0x3f;
  

• else
  

• 	val = (para->tpr11 >> 7) & 0x1e;
  
  

  ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x604); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x1a, ptr);
  

• 	writel_relaxed(0x1a, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x650);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x710);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x64c);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x70c);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->odt_en >> 23) & 0x1e;
  

• else
  

• 	val = (para->tpr11 >> 23) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x650);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x710);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x64c);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x70c);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->tpr11 >> 24) & 0x3f;
  

• else
  

• 	val = (para->tpr11 >> 11) & 0x1e;
  
  

  ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x658); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x1a, ptr);
  

• 	writel_relaxed(0x1a, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a4);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x764);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a0);
  

• writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x760);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->odt_en >> 27) & 0x1e;
  

• else
  

• 	val = (para->tpr11 >> 27) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6a4);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x764);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6a0);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x760);
  
  

  dmb();

@@ -635,49 +679,93 @@ static void mctl_phy_bit_delay_compensation(struct dram_para *para) clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80); clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 4);

• if (para->tpr10 & BIT(30))
  

• 	val = para->tpr12 & 0x3f;
  

• else
  

• 	val = (para->tpr12 & 0xf) << 1;
  

• ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x480); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x10, ptr);
  

• 	writel_relaxed(0x10, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x528);
  

• writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x5e8);
  

• writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x4c8);
  

• writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x588);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->odt_en << 1) & 0x1e;
  

• else
  

• 	val = (para->tpr12 >> 15) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x528);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5e8);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4c8);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x588);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->tpr12 >> 8) & 0x3f;
  

• else
  

• 	val = (para->tpr12 >> 3) & 0x1e;
  
  

  ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d4); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x12, ptr);
  

• 	writel_relaxed(0x12, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x52c);
  

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5ec);
  

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x51c);
  

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5dc);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->odt_en >> 3) & 0x1e;
  

• else
  

• 	val = (para->tpr12 >> 19) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x52c);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5ec);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x51c);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5dc);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->tpr12 >> 16) & 0x3f;
  

• else
  

• 	val = (para->tpr12 >> 7) & 0x1e;
  
  

  ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x600); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x12, ptr);
  

• 	writel_relaxed(0x12, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x6a8);
  

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x768);
  

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x648);
  

• writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x708);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->odt_en >> 7) & 0x1e;
  

• else
  

• 	val = (para->tpr12 >> 23) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6a8);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x768);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x648);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x708);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->tpr12 >> 24) & 0x3f;
  

• else
  

• 	val = (para->tpr12 >> 11) & 0x1e;
  
  

  ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x654); for (i = 0; i < 9; i++) {

• 	writel_relaxed(0x14, ptr);
  

• 	writel_relaxed(0x14, ptr + 0x30);
  

• 	writel_relaxed(val, ptr);
  

• 	writel_relaxed(val, ptr + 0x30);
  ptr += 2;
  

  }

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x6ac);
  

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x76c);
  

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x69c);
  

• writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x75c);
  

• if (para->tpr10 & BIT(30))
  

• 	val = (para->odt_en >> 11) & 0x1e;
  

• else
  

• 	val = (para->tpr12 >> 27) & 0x1e;
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6ac);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x76c);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x69c);
  

• writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x75c);
  
  

  dmb();

@@ -1021,7 +1109,10 @@ unsigned long sunxi_dram_init(void) .dx_odt = CONFIG_DRAM_SUN50I_H616_DX_ODT, .dx_dri = CONFIG_DRAM_SUN50I_H616_DX_DRI, .ca_dri = CONFIG_DRAM_SUN50I_H616_CA_DRI,

• .odt_en = CONFIG_DRAM_SUN50I_H616_ODT_EN,
  

  .tpr10 = CONFIG_DRAM_SUN50I_H616_TPR10,

• .tpr11 = CONFIG_DRAM_SUN50I_H616_TPR11,
  

• .tpr12 = CONFIG_DRAM_SUN50I_H616_TPR12,
  

  }; unsigned long size;

diff --git a/configs/x96_mate_defconfig b/configs/x96_mate_defconfig index b00daa458b28..acc64898da19 100644 --- a/configs/x96_mate_defconfig +++ b/configs/x96_mate_defconfig @@ -7,6 +7,8 @@ CONFIG_DRAM_SUN50I_H616_DX_ODT=0x03030303 CONFIG_DRAM_SUN50I_H616_DX_DRI=0x0e0e0e0e CONFIG_DRAM_SUN50I_H616_CA_DRI=0x1c12 CONFIG_DRAM_SUN50I_H616_TPR10=0x2f0007 +CONFIG_DRAM_SUN50I_H616_TPR11=0xffffdddd +CONFIG_DRAM_SUN50I_H616_TPR12=0xfedf7557 CONFIG_MACH_SUN50I_H616=y CONFIG_R_I2C_ENABLE=y # CONFIG_SYS_MALLOC_CLEAR_ON_INIT is not set