8 Dec
2009
8 Dec
'09
11:06 p.m.
Dear Nick Thompson,
In message 4B1E71D9.6080802@ge.com you wrote:
Improve read performance from Large Page NAND devices.
This patch produces a ~31% improvement in oob_first read speed (on a 300MHz ARM9). The time for a mid-buffer 2k page read is now 293us, 6.99MB/s (was 385us, 5.31MB/s). oob_first is probably the best case improvement.
Signed-off-by: Nick Thompson nick.thompson@ge.com
I tested this on mpc5121ads (sector size 128 KiB) and sequoia (sector size 16 KiB).
The patch applied not cleanly against "master" (but was easy to fix).
However, I did not notice any changes to the speed for a "nand read" at all.
Is this not the right flash types, or not thr right type of test?
Best regards,
Wolfgang Denk
--
DENX Software Engineering GmbH, MD: Wolfgang Denk & Detlev Zundel
HRB 165235 Munich, Office: Kirchenstr.5, D-82194 Groebenzell, Germany
Phone: (+49)-8142-66989-10 Fax: (+49)-8142-66989-80 Email: wd@denx.de
The Gates in my computer are AND, OR and NOT; they are not Bill.